研究目的
Investigating the restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors for transparent displays.
研究成果
Oxygen annealing significantly improves the device performance and photo-induced stability of a-HfIZO TFTs by reducing the density of interfacial states related to oxygen vacancies. This method enhances device-to-device and run-to-run uniformity, making it promising for large-area transparent displays.
研究不足
The study is limited to the effects of oxygen annealing on a-HfIZO TFTs and does not explore other post-treatment methods or materials.
1：Experimental Design and Method Selection:
The study involves the fabrication of a-HfIZO TFTs with post-treatment of oxygen annealing to investigate its restorative effect on device performance.
2：Sample Selection and Data Sources:
A 40 nm thick a-HfIZO active layer was deposited by DC sputtering on a glass substrate.
3：List of Experimental Equipment and Materials:
Molybdenum (Mo) film as gate and source/drain electrodes, silicon nitride/silicon dioxide (SiNx-SiO2) bi-layer as gate dielectric, and a-HfIZO as the active layer.
4：Experimental Procedures and Operational Workflow:
The fabrication process includes deposition, patterning, and encapsulation, followed by oxygen annealing and electrical characterization.
5：Data Analysis Methods:
The density of interfacial states was calculated using the sub-threshold swing (S.S.) analysis method.
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