研究目的
Investigating the gas-jet plasma-chemical method for silicon film deposition, including experimental study, numerical calculation, and analysis within a gas-dynamic model.
研究成果
The numerical model developed for the gas mixture flow in the gas-jet plasma-chemical deposition method allows for the determination of film thickness distribution on the substrate surface. The activation zone shape significantly affects the deposition rate simulation results. The contribution of background gas molecules to the deposition rate is minimal, which is advantageous for film quality.
研究不足
The activation zone shape significantly affects the simulation results of the deposition rate distribution. Changes in the diameter of the activation zone by less than 2% lead to two-fold changes in the deposition rate.
