摘要： In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling ?eld-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including Ioff, on/off current ratio (Ion/Ioff), subthreshold swing (S), cut-off frequency (ft), maximum oscillating frequency (fmax), and Johnson’s ?gure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed Ioff, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (Lch) of 50 nm demonstrated maximum Ion = 3.5 mA/μm, extremely low Ioff = 1 × 10?21 A/μm, minimum S of 8.8 mV/dec, and the maximum values of ft and fmax are obtained as 100 GHz and 5.5 THz, respectively. In order to con?rm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz · V.