研究目的
To investigate the MOCVD behaviour of dimethyl aluminum hydride (DMAH) and O2 as a precursor and an oxidant, respectively, for the deposition of Al2O3 thin films and to observe the band alignment of Al2O3/Si gate stacks.
研究成果
High quality Al2O3 films with lower carbon content and increased refractive index were successfully grown using DMAH and O2. The band offset of the Al2O3/Si gate stacks was found to be suitable for CMOS devices.
研究不足
The study focuses on the deposition and band alignment of Al2O3/Si gate stacks using a new CVD chemistry, but does not extensively explore the electrical properties or device performance of the fabricated MOS devices.
1：Experimental Design and Method Selection:
Al2O3 thin films were deposited using MOCVD with DMAH and O2 as the precursor and oxidant, respectively. 1% propylamine was added to reduce the viscosity of DMAH.
2：Sample Selection and Data Sources:
Si wafers were used as substrates.
3：List of Experimental Equipment and Materials:
MOCVD apparatus, DMAH, O2, propylamine.
4：Experimental Procedures and Operational Workflow:
Films were deposited at various temperatures and oxygen partial pressures to analyze carbon content and refractive index.
5：Data Analysis Methods:
Ex situ O1s energy loss spectra (ELS) and synchrotron radiation X-ray photoemission spectroscopy (SRXPS) were used to investigate the band gap and band alignment.
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