研究目的
To demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs) with monolithic liquid metal interconnects for high integration density and mechanical durability in stretchable displays or electronic skins.
研究成果
The study successfully demonstrated a fabrication technique for stretchable active matrices of oxide TFTs with monolithic liquid metal interconnects, offering high integration density and mechanical durability. The approach is compatible with conventional flexible circuit technology and suitable for applications requiring high resolution and reliability across large areas.
研究不足
The technique requires precise alignment and may face challenges in scaling up for larger areas or higher pixel densities. The adhesion between polyimide and PDMS regions could be improved to prevent cracks at higher strains.
1：Experimental Design and Method Selection:
The study employs a photolithography-based technique for integrating TFTs and cross points of two metal layers on stiff islands with gallium-based liquid metal interconnects within an elastomeric matrix.
2：Sample Selection and Data Sources:
A 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area was fabricated.
3：List of Experimental Equipment and Materials:
Polyimide layers, Mo and W electrodes, indium gallium zinc oxide channel, poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisioxane) gate insulator, EGaIn liquid metal, PDMS.
4：Experimental Procedures and Operational Workflow:
Fabrication involved spin-coating polyimide layers, patterning islands, forming TFTs and cross points, adding EGaIn interconnects via roll-painting and lift-off, and encapsulating with PDMS.
5：Data Analysis Methods:
Transfer characteristics of TFTs were analyzed under various tensile strains.
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