研究目的
Investigating the electronic structures and depletion regions at lateral MoSe2-WSe2 heterojunctions to understand their potential in device applications.
研究成果
The study revealed a smooth, narrow, and symmetric depletion region at a MoSe2-WSe2 heterointerface, indicating high carrier concentration and internal electric fields. These findings suggest potential benefits for the design of lateral TMDC devices, despite the presence of defects and irregular interface orientations.
研究不足
The study is limited by the defect-rich nature of the heterointerface and the influence of the substrate on carrier concentration. The findings may not be directly applicable to devices under different conditions or with different materials.
1：Experimental Design and Method Selection:
The study utilized scanning tunneling microscopy (STM) and spectroscopy (STS) to visualize and analyze the electronic structures of MoSe2-WSe2 lateral heterojunctions.
2：Sample Selection and Data Sources:
High-crystalline-quality monolayer MoSe2-WSe2 lateral heterostructures were synthesized on sapphire by chemical vapor deposition (CVD) and transferred onto an HOPG surface for STM/STS measurements.
3：List of Experimental Equipment and Materials:
STM and STS were performed in Omicron multifunctional chambers in ultrahigh vacuum. The samples were annealed to remove adsorbates before measurements.
4：Experimental Procedures and Operational Workflow:
STM images were acquired in the constant current mode, and STS was performed with lock-in techniques. The data were processed using the WSxM software package.
5：Data Analysis Methods:
The spatial variation of bandgap positions near the boundary was analyzed to extract information about the Thomas-Fermi screening length and carrier concentration.
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