研究目的
Investigating the novel sub-threshold IDDQ signature and its relationship to aging during high voltage stress in 14 nm SOI Ring Oscillators (ROs).
研究成果
A novel sub-threshold IDDQ signature was observed and experimentally investigated using ROs with different VTs and gate types undergoing different stress conditions. The signature changes in the presence of non-uniform VT distribution among the stages of the RO, which can be attributed to process variability or non-uniform aging/degradation. Detailed circuit level simulations supported the understanding of the signature's relationship with VT non-uniformity.
研究不足
The study is limited to 14 nm SOI Ring Oscillators and may not be directly applicable to other technologies or circuit types without further investigation.
1：Experimental Design and Method Selection:
Detailed experimental characterization of the IDDQ current of 14 nm SOI ROs during different types of stress conditions including AC/DC, Ramp Voltage Stress (RVS) and Constant Voltage Stress (CVS).
2：Sample Selection and Data Sources:
ROs fabricated in 14 nm SOI technology node, each consisting of 100 inverting stages.
3：List of Experimental Equipment and Materials:
Automated setup for acquiring signatures from about 1,100 ROs, low noise power supply, switching matrix, scope, and counter.
4：Experimental Procedures and Operational Workflow:
Sub-threshold IDDQ characterizations were performed pre- and post-aging with different types/amounts of stress.
5：Data Analysis Methods:
Detailed circuit level simulations to understand the underlying cause of the sub-threshold IDDQ signature.
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