研究目的
To discover the use of a capacitively coupled radio frequency (RF) atmospheric-pressure plasma jet for silicon etching in a chamberless environment, focusing on the effects of C4F8 flow rate and oxygen addition on the etching rate.
研究成果
The crystalline silicon was successfully etched using a capacitively coupled RF double-pipe C4F8/Ar gas mixture plasma jet, with the etching rate significantly dependent on the C4F8 gas flow input. The maximum etching rate achieved was 7.2 μm/min at 250 sccm C4F8 gas flow rate and 100 W plasma power. Oxygen addition was found to reduce the etching rate, suggesting its role in affecting plasma stability and reactive species production.
研究不足
The study was limited to the effects of C4F8 gas flow rate and oxygen addition on silicon etching rates using a specific type of atmospheric-pressure plasma jet. The potential for scaling up the process and its applicability to other materials were not explored.
1：Experimental Design and Method Selection:
A capacitively coupled RF double-pipe atmospheric-pressure plasma jet was used for etching crystalline silicon wafers. The study focused on the effects of C4F8 gas flow rate and oxygen addition on the etching rate.
2：Sample Selection and Data Sources:
Crystalline silicon wafers were cut into 2 × 2 cm2 sizes and cleaned using acetone and ultrasonication before etching.
3：List of Experimental Equipment and Materials:
The setup included a 13.56-MHz RF power supply, a quartz tube for plasma generation, and gases (Ar and C4F8) with 99.999% purity.
4：56-MHz RF power supply, a quartz tube for plasma generation, and gases (Ar and C4F8) with 999% purity.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The plasma jet was exposed to silicon samples for 20 minutes at various C4F8 gas flow rates (50–250 sccm) and power levels (100 W).
5：Data Analysis Methods:
Etching rates were measured using a surface profiler, and plasma glow characteristics were captured with a digital camera.
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