研究目的
Investigating the suppression of ambipolar behavior and improved high-frequency response in a new Double Gate Tunnel Field-Effect Transistor.
研究成果
The proposed HGO-HJ-DG-TFET shows improved characteristics such as enhanced drain current, lower threshold voltage, and lower subthreshold slope. It demonstrates superior DC and RF performance at optimized channel length (LG= 50nm) and drain voltage (Vds= 1V), making it suitable for high frequency applications.
研究不足
The study is based on simulation results which may differ from actual fabrication outcomes. The optimization of channel length and drain voltage suggests better performance at smaller scales, but fabrication complexity increases at such nanometer levels.
1：Experimental Design and Method Selection:
The study involves simulation of different TFET architectures including Conventional DG-TFET, Hetero Gate Oxide DG-TFET, and Hetero Gate Oxide Hetero-Junction DG-TFET using Silvaco TCAD.
2：Sample Selection and Data Sources:
The simulation setup includes parameters like source doping concentration, channel doping concentration, drain doping concentration, source length, channel length, drain length, gate oxide thickness, and body thickness.
3：List of Experimental Equipment and Materials:
Silvaco TCAD (Version
4：R) is used for simulation. Experimental Procedures and Operational Workflow:
The simulation incorporates models like Band-to-band tunneling (BTBT), Band Gap Narrowing (BGN), NON-LOCAL BTBT, Wentzel-Kramer-Brillouin (WKB), Auger recombination, Concentration-Dependent Mobility (CONMOB), Field-Dependent Mobility (FLDMOB), and Shockley Read Hall (SRH) recombination model.
5：Data Analysis Methods:
The analysis includes DC and RF characteristics under Thermal Equilibrium, ON-state, OFF-state, and Ambipolar state.
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