研究目的
Investigating the effect of substrate treatments and deposition parameters on the surface morphology and growth rate of (010)-oriented β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy, and exploring the potential of metal-exchange catalysis to enhance growth rates.
研究成果
The study demonstrates that Ga-rich conditions at high substrate temperatures lead to the formation of (110) and (ˉ110) facets on (010) β-Ga2O3 surfaces, suggesting (110) as a potentially stable substrate orientation. Metal-exchange catalysis via an additional In-flux significantly increases the growth rate of β-Ga2O3 films while maintaining low surface roughness and monoclinic crystal structure, without significant In incorporation. These findings are crucial for the development of high-quality β-Ga2O3 thin films for optoelectronic applications.
研究不足
The study is limited to (010)-oriented β-Ga2O3 thin films and does not explore other orientations in depth. The mechanisms behind the observed faceting and the exact role of In in metal-exchange catalysis require further theoretical and experimental investigation.
1：Experimental Design and Method Selection:
The study involved homoepitaxial growth of β-Ga2O3 thin films on (010)-oriented substrates using plasma-assisted molecular beam epitaxy (MBE). The effects of substrate treatments (O-plasma and Ga-etching) and deposition parameters (growth temperature and metal-to-oxygen flux ratio) were investigated.
2：Sample Selection and Data Sources:
Commercial β-Ga2O3 (010) insulating (Fe-doped) and n-type (Sn-doped) substrates were used. In situ and ex situ characterizations were performed using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), and transmission electron microscopy (TEM).
3：List of Experimental Equipment and Materials:
MBE system equipped with an O-plasma source, RHEED system, AFM, XRD, TEM, and scanning electron microscope-based energy dispersive X-ray (EDX) spectroscopy.
4：Experimental Procedures and Operational Workflow:
Substrates were treated with O-plasma or Ga-etching before deposition. Films were grown under varying conditions of temperature and metal-to-oxygen flux ratio, with some samples grown under an additional In-flux to study metal-exchange catalysis.
5：Data Analysis Methods:
Surface morphology was analyzed via AFM, crystal structure via RHEED and XRD, and composition via EDX. Growth rates were determined from film thickness measurements.
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