研究目的
Investigating the simulation of degradation phenomena in semiconductor components to ensure the reliability of integrated circuits.
研究成果
The study highlights the importance of integrating reliability studies during the design phase of integrated circuits using dedicated tools. It demonstrates that understanding and simulating the aging of transistors can help in designing circuits that are both efficient and reliable over their lifetime.
研究不足
The study is limited by the accuracy of the degradation models and the need for validation through accelerated aging tests. The simulation of circuit degradation under activated-mode stress would be more accurate if the effect of MPOS degradation by hot carriers were taken into account.
1:Experimental Design and Method Selection:
The study involves the simulation of aging mechanisms in MOS and bipolar transistors to predict the reliability of integrated circuits.
2:Sample Selection and Data Sources:
The study uses models of degradation mechanisms in transistors, validated through accelerated aging tests.
3:List of Experimental Equipment and Materials:
Reliability simulators around SPICE simulators are used.
4:Experimental Procedures and Operational Workflow:
The circuit is subjected to stress conditions (voltage polarization, temporal and temperature stresses) to calculate degradations from models for each transistor.
5:Data Analysis Methods:
The degradation of electrical parameters is analyzed using statistical techniques and software tools.
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