研究目的
Investigating the quantum transport behavior in ultra-thin body (UTB) Si double gate (DG) MOSFETs, focusing on the presence of quasi-bound electronic states, Fano-interference phenomenon, and vortices in electron wavefunctions at transmission zeros.
研究成果
The developed simulation tool successfully models ballistic quantum electron transport in DG FETs, revealing Fano interference and vortices in electron current at cryogenic temperatures. However, thermal smearing at higher temperatures prevents these phenomena from manifesting in the current-voltage characteristics, suggesting the need for specific experimental conditions to observe these quantum effects macroscopically.
研究不足
The study is limited to ballistic quantum transport simulations without considering scattering effects. The observed quantum phenomena, such as Fano interference and vortices, are masked by thermal smearing at higher temperatures, limiting their observability in practical device operation.
1：Experimental Design and Method Selection:
The study employs a simulation tool based on the effective mass approximation to model two-dimensional (2-D) ballistic quantum transport in DG MOSFETs. The tool solves the 2-D Schr¨odinger and Poisson equations self-consistently with open boundary conditions using the Quantum Transmitting Boundary method (QTBM).
2：Sample Selection and Data Sources:
The simulation focuses on a Si UTB DG nMOS with a channel length of 10 nm, lightly p-type doped channel, and highly doped n-type source and drain regions.
3：List of Experimental Equipment and Materials:
The study is computational, utilizing a simulation program without specifying physical equipment.
4：Experimental Procedures and Operational Workflow:
The simulation involves solving the Schr¨odinger and Poisson equations self-consistently, calculating electron and hole densities, and solving the 2-D Poisson equation to generate a new potential for the self-consistent loop.
5：Data Analysis Methods:
The transmission coefficient, local density of states (LDoS), and total drain current are calculated from the simulation results to analyze the quantum transport behavior.
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