1：Experimental Design and Method Selection:

The study employed a two-step deposition of vanadium thin films combining with SiO2 sphere lithography (NSL) technique. The first layer of vanadium thin film was deposited on the substrate with self-assembly SiO2 spheres, which was then removed by ultrasonic oscillation to form orderly perforated vanadium thin film. The second layer of vanadium thin film was deposited on the perforated vanadium thin film, forming a semi-perforated double layer of vanadium thin film, which was then rapid thermal annealed to form semi-perforated double VO2 thin films.

2：Sample Selection and Data Sources:

Sapphire was selected as the substrate. Colloidal solutions of SiO2 spheres with a diameter of 600 nm were used to form monolayers on the substrate.

3：List of Experimental Equipment and Materials:

DPS-III vacuum sputtering deposition system with pure vanadium target, rapid thermal annealing system (AG 610), field emission scanning electron microscope (FESEM, HitachiS4800), X-ray diffraction (XRD, RIGAKU D/MAX 2500 V/PC), UV–vis-NIR spectrophotometer.

4：Experimental Procedures and Operational Workflow:

The substrate was cleaned ultrasonically by acetone and deionized water. Monolayers of hexagonal-close-packed SiO2 spheres template was formed on the sapphire substrate. Vanadium thin films were deposited using the DPS-III system under specific conditions. The samples were then annealed using the AG 610 system.

5：Data Analysis Methods:

The morphology of VO2 samples was investigated using FESEM. XRD patterns were obtained to analyze the crystalline structure. Optical properties were measured using UV–vis-NIR spectrophotometer at 25 °C and 90 °C. Tlum and ΔTsol were calculated from the recorded spectra.