研究目的
The main objective is to understand the implications of designing a Phase Shifted Full Bridge for space power conversion and obtaining a design that can be easily transitioned into a rad-hard version for further space qualification testing.
研究成果
The main design considerations for the development of a GaN based Isolated DC-DC converter using phase shift modulation and synchronous rectification for space power conversion is presented in this paper. A survey of the benefits of GaN FETs for space power conversion is presented. The main drivers in the selection of the Phase Shifted Full Bridge and Current Doubler synchronous rectification are summarized. Furthermore, this paper presents the design considerations taken to implement the converter abiding by limited rad-hard part availability constraints as well as preferred solutions to ensure a robust design. Test results for the converter achieving higher than 95% efficiency at its nominal 100 V input, 20 V output was demonstrated.
研究不足
The study acknowledges that full qualification of the Phase Shifted Full Bridge topology under high radiation is outside the scope of this work. Additionally, the lack of rad-hard qualified digital isolators for use with newly released 200 V rad-hard GaN FETs presents a significant design challenge.
1：Experimental Design and Method Selection:
The study focuses on the practical implementation of a Phase Shifted Full Bridge DC-DC converter with synchronous rectification using radiation hardened GaN FETs for space applications. The methodology includes a survey comparing GaN FETs against current Silicon power transistor technology, topology selection drivers, and detailed design considerations for space applications.
2：Sample Selection and Data Sources:
The study uses recently released radiation hardened GaN FETs, specifically the Freebird Semiconductor FBG20N18B 200 V, 18 A, 26 mΩ rad-hard GaN FET, for the Full-Bridge and synchronous rectifier power stages.
3：List of Experimental Equipment and Materials:
The main components include the FBG20N18B GaN FETs, UCC27611 GaN FET driver from Texas Instruments, and various other commercial and space-rated components as outlined in the paper.
4：Experimental Procedures and Operational Workflow:
The converter was designed to operate from a 100 V DC bus and deliver 400 W from a fixed 20 V output at more than 95% efficiency. The design process included considerations for control signal isolation, GaN gate driver and isolated gate drive, part procurement and prototyping costs, phase shifted full bridge control, rad-hard GaN FETs paralleling, PWM control, current sensing for peak current mode control, and ZVS range in phase shifted full bridge.
5：Data Analysis Methods:
The study includes efficiency measurements, thermal imaging for heat distribution analysis, and gate-source voltage waveform analysis to verify current sharing and symmetry of the PCB layout among paralleled rad-hard GaN FETs.
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