研究目的
To experimentally compare two series resonant full bridge converters for use in BIPV applications, focusing on efficiency, power density, and thermal performance.
研究成果
The series resonant converter was found to be the most promising solution for overcoming oscillations in the transformer secondary of a phase-shifted full bridge, allowing for high conversion efficiency. Although the GaN version had a higher power density, its efficiency was slightly lower, possibly due to the switches or the output rectifier. Thermal analysis indicated that the resonant capacitor was a limiting factor due to its elevated temperature.
研究不足
The efficiency difference between the two prototypes falls within the measurement uncertainty, making it difficult to definitively conclude which is better. The resonant capacitor in the GaN converter reaches temperatures close to its maximum operating limit.
1：Experimental Design and Method Selection:
The study compares two prototypes of series resonant full bridge converters, one using Si MOSFETs and the other using GaN HEMTs. The design rationale includes the selection of components based on their characteristics and the trade-offs between them.
2：Sample Selection and Data Sources:
The prototypes are built and tested under similar conditions to compare their performance. Data on efficiency, power density, and thermal performance are collected.
3：List of Experimental Equipment and Materials:
Includes Si MOSFETs, GaN HEMTs, resonant inductors, capacitors, and other components as detailed in the paper.
4：Experimental Procedures and Operational Workflow:
The converters are operated under various load conditions to measure their performance. Thermal images are taken to analyze the temperature distribution.
5：Data Analysis Methods:
The efficiency curves are plotted, and thermal performance is analyzed based on the thermal images.
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