研究目的
Investigating the thermally triggered SiC MOSFET aging effect on SiC based boost PFC converter’s conducted EMI.
研究成果
The study demonstrates that SiC MOSFET aging leads to changes in device characteristics and switching transients, affecting conducted EMI noise in CCM boost PFC converters. High frequency noise decrement is observed after thermal aging, with both DM and CM noise decreasing at high frequency ranges. This research contributes to reliable SiC based converter designs for meeting conducted EMI standards.
研究不足
The study focuses on the aging effect on converter performance and system noise evaluation, with details of aging mechanism and failure analysis considered out of scope. The impact of aging on switching characteristics and converter performance has been rarely discussed, indicating a need for more detailed analysis.
1：Experimental Design and Method Selection:
A power cycling test is used to accelerate the aging process for SiC MOSFET samples, mimicking long-term operation under high temperature. Device characteristics are evaluated by automated curve tracer to study electrical parameter shifts over aging.
2：Sample Selection and Data Sources:
1200 V SiC MOSFET samples rated at 175oC are used in this study.
3：List of Experimental Equipment and Materials:
A multi-channel power cycling bench for SiC MOSFET aging, temperature sensor for monitoring, DSP for feedback control, and fans for forced cooling.
4：Experimental Procedures and Operational Workflow:
Devices are heated using conduction loss, with temperature monitored and controlled. After reaching upper temperature limits, cooling is initiated until lower limits are reached, defining one aging cycle.
5：Data Analysis Methods:
Device electrical parameters and switching transients are evaluated over aging to support conducted EMI discussion. Both DM and CM noise changes are analyzed in detail.
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获取完整内容-
SiC MOSFET
1200 V
Used in continuous conduction mode (CCM) Boost PFC converter for EMI evaluation.
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power cycling bench
Used for accelerating the aging process of SiC MOSFET samples.
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temperature sensor
Used for temperature monitoring and feedback to DSP during the aging process.
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DSP
Used for controlling the heating and cooling process during the aging test.
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fans
Used for forced cooling during the aging process.
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automated curve tracer
Used to measure device electrical parameters over aging.
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double pulse tester (DPT)
Used to evaluate device switching transient throughout the degradation process.
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800W boost PFC converter
Built for conducted EMI evaluation over SiC MOSFET aging.
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LISN networks
Used for conducted EMI measurement.
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spectrum analyzer
Used for measuring conducted EMI.
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