研究目的
Investigating the performance and reliability of 1.2 kV-rated trench-gate SiC power MOSFETs with thick trench bottom oxide compared to previous structures.
研究成果
The thick trench bottom oxide structure demonstrates superior specific on-resistance and reduced electric field in the oxide, making it a promising design for high-performance SiC power MOSFETs. The analytical model developed provides a useful tool for estimating electric field reduction in the trench bottom oxide.
研究不足
The study is based on numerical simulations, which may not fully capture all real-world operational conditions and variations. The focus on 1.2 kV-rated devices may limit the applicability of findings to other voltage ratings.
1：Experimental Design and Method Selection:
Numerical simulations were performed to analyze the performance of trench-gate SiC power MOSFETs with varying trench bottom oxide thicknesses.
2：Sample Selection and Data Sources:
The study focused on
3：2 kV-rated devices with trench bottom oxide thicknesses between 500 ?A and 8000 ?A. List of Experimental Equipment and Materials:
The simulations utilized a gate oxide thickness of 500 ?A for all structures.
4：Experimental Procedures and Operational Workflow:
The study involved extracting specific on-resistance (Ron,sp), breakdown voltage (BV), threshold voltage (VTH), gate-drain capacitance (Cgd,sp), and gate charge (Qgd) from the simulations.
5：Data Analysis Methods:
The results were compared across different structures to evaluate performance improvements.
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