研究目的
To develop a high-performance hydrogen gas sensor that can operate in harsh environments (high temperature, corrosion atmosphere, etc.) using a simple one-step wet chemical reduction reaction method.
研究成果
The Pt NCs@SiC NSs sensor exhibits excellent ability to detect hydrogen even under high temperatures, with good selectivity, linear response towards different hydrogen concentrations, and long-term stability. The gas sensing mechanism involves both spill-over effect on the surface and transduction process inside SiC.
研究不足
The study is limited by the high resistance of SiC semiconductor at low temperatures, which is out of the system detecting range (200 MΩ).
1：Experimental Design and Method Selection:
A simple one-step wet chemical reduction reaction method was used to prepare Pt NCs@SiC NSs.
2：Sample Selection and Data Sources:
Silicon carbide nanosheets (SiC NSs) were prepared via a carbothermal reduction reaction between Si powder and graphene oxide (GO).
3：List of Experimental Equipment and Materials:
SEM (Hitachi S-4800), HRTEM (Titan G2 60-300), XRD (Bruker AXS D8 Advance), XPS (Thermo Scientific ESCALAB 250 Xi spectrometer), FT-IR (Nicolet Avatar 360), EIS (MULTI AUTOLAB M204 workstation).
4：Experimental Procedures and Operational Workflow:
Pt NCs were loaded onto SiC NSs via a chemical reduction reaction using ethylene glycol (EG) as a reducing agent.
5：Data Analysis Methods:
The gas sensing properties were analyzed using a specialized CGS-1TP intelligent gas sensing analyzing system.
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