研究目的
Investigating the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments.
研究成果
The study concluded that single-DC-stress, temperature accelerated life testing does not account for the critical degradation in a GaN HEMT. Further work is needed to investigate the stress effects of RF operation.
研究不足
The study relied on simulation data and indirect measurements for temperature estimation due to impracticality of direct measurement. The accuracy of thermal resistance estimates is subject to significant error.
1：Experimental Design and Method Selection:
The study involved testing GaN HEMTs under high DC power and high voltage conditions to assess degradation.
2：Sample Selection and Data Sources:
Devices from the same lot with the same structure were tested under two different sets of conditions.
3：List of Experimental Equipment and Materials:
Devices were tested in an Accel-RF/DC test station under dry nitrogen.
4：Experimental Procedures and Operational Workflow:
Devices were subjected to stress tests for 300 and 600 hours, with periodic characterizations.
5：Data Analysis Methods:
Degradation was analyzed using Arrhenius model and other statistical techniques.
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