1：Experimental Design and Method Selection:

ZnO thin films were deposited by RF magnetron sputtering using a zinc target. The method selection was based on the advantages of RF magnetron sputtering for film growth, including easy control of crystalline orientation and good interfacial adhesion to the substrate.

2：Sample Selection and Data Sources:

The substrates used were p-type silicon with (100) orientation, thoroughly cleaned with organic solvents. The optical properties were characterized using a UV-Visible CARY spectrometer.

3：List of Experimental Equipment and Materials:

RF magnetron sputtering system, zinc target (99.99%), p-type silicon substrates, UV-Visible CARY spectrometer, flow meter (ASM, AF 2600), Pirani gauge, ion gauge controller (IGC – 16 F).

4：99%), p-type silicon substrates, UV-Visible CARY spectrometer, flow meter (ASM, AF 2600), Pirani gauge, ion gauge controller (IGC – 16 F). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: The sputtering was carried out in an oxygen and argon mixed gas atmosphere at a frequency of 13.56 MHz. The RF power was about 50 W, and the sputtering pressure was maintained at 3.35 x 10-3 torr. The films were annealed in helium ambient at 650°C for 15 minutes.

5：56 MHz. The RF power was about 50 W, and the sputtering pressure was maintained at 35 x 10-3 torr. The films were annealed in helium ambient at 650°C for 15 minutes. Data Analysis Methods:

5. Data Analysis Methods: The optical constants were determined from the transmission spectra using a theoretical model for complex index. The refractive index and thickness of the films were calculated using the Manifacier et al. method.