研究目的
To propose and verify a single dielectric resonator antenna (DRA) that enhances the antenna gain of each element in a 2×2 THz antenna array using CMOS technology, aiming to simplify assembly and reduce costs while achieving high gain through higher-order mode operation.
研究成果
The proposed single DRA operating at the TE3,δ,9 mode successfully enhances the antenna gain of each element in a 2×2 CMOS THz array, achieving a measured gain improvement of 7 dB over conventional on-chip antennas. This simplifies assembly and reduces costs, with verification through simulations and experiments. The DRA enables practical THz imaging applications, demonstrating its potential for improving THz system performance.
研究不足
The measurement setup is sensitive to alignment, leading to variations in results. The lock-in amplifier limits the chopping frequency to 1 kHz, restricting NEP improvement. The DRA size is constrained by IPD technology, potentially limiting higher gain options. Assembly misalignment could affect performance.
1：Experimental Design and Method Selection:
The study involves designing a large-sized DRA operating at the TE3,δ,9 higher-order mode to enhance gain for a 2×2 CMOS THz antenna array. Theoretical analysis using electromagnetic simulations (ANSYS HFSS) is employed to model the DRA's resonance and radiation characteristics. A flip-chip bonding technique is used for packaging.
2：Sample Selection and Data Sources:
The DRA is fabricated using an integrated-passive-device (IPD) technology with high-resistivity silicon material. The CMOS antenna array is realized in a 0.18-μm CMOS process. Four identical power detectors (PDs) are integrated with each antenna element for characterization.
3：18-μm CMOS process. Four identical power detectors (PDs) are integrated with each antenna element for characterization.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes a flip-chip bonding machine, ANSYS HFSS simulation tool, VDI AMC 306 signal source module, VDI PM4 power meter, Stanford Research Systems SR830 lock-in amplifier, step motor, and lenses for imaging. Materials include gold bumps, high-resistivity silicon, and CMOS chips.
4：Experimental Procedures and Operational Workflow:
The DRA is flip-chip bonded to the CMOS chip. Measurements involve using a THz signal source to irradiate the antenna array, with PD outputs measured via lock-in amplifier to determine voltage responsivity and radiation patterns. A THz imaging system is set up with step motors to scan objects.
5：Data Analysis Methods:
Data is analyzed using Friis transmission equation to calculate received power and antenna gain. Simulation results are compared with measurements to validate performance. Statistical analysis includes gain enhancement ratios and noise equivalent power (NEP) calculations.
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