1：Experimental Design and Method Selection:

The study uses patterned metallic nanostructures to systematically investigate MAPE in SF6/O2 plasmas, comparing it to metal-assisted chemical etching (MACE).

2：Sample Selection and Data Sources:

n-type and p-type (100) silicon wafers with resistivity 1–10 Ω cm are used, patterned with Au, Cr, Ag, Pt, and Cu films via electron beam and phase shift lithography.

3：List of Experimental Equipment and Materials:

Equipment includes RAITH 150 TWO electron beam lithography system, Edwards A500-FL500 electron beam metal evaporator, PlasmaPro NGP90 plasma processing system, Zeiss XB1540 and LEO Gemini 1525 FEGSEM for imaging. Materials include polymethyl methacrylate photoresist, metals (Au, Cr, Ag, Pt, Cu), and SF6/O2 gases.

4：Experimental Procedures and Operational Workflow:

Patterns are created on silicon substrates, metal films are deposited, lift-off is performed, and RIE is conducted at specified conditions (e.g., 175 mTorr, 50 W power, 40 sccm total gas flow) with varying O2 concentrations. Etching is imaged and analyzed using SEM.

5：Data Analysis Methods:

Etch depths are measured using ImageJ software, with enhancements calculated relative to control conditions; statistical analysis includes median and range calculations from multiple measurements.