研究目的
To study the effects of film [Cu]/[Cr] ratio on the properties of the material, as well as analyze and explore its phase transformation, structure, and optical and electrical properties.
研究成果
The [Cu]/[Cr] ratio significantly influences phase formation and optoelectronic properties. A ratio of approximately 1 (achieved at Cu-target power of 22 W) results in pure delafossite CuCrO2 phase with high crystallinity, optimal electrical conductivity (resistivity of 5.13 Ω cm), visible transmittance (58.31%), and highest figure of merit (1.51 × 10?8 Ω?1). Deviations from this ratio lead to impurity phases (CuCr2O4 or CuO) that deteriorate properties. This provides fundamental insights for developing p-type transparent conducting oxides.
研究不足
The study is limited to specific annealing conditions (700 °C, Ar atmosphere) and sputtering parameters. The electrical performance of undoped CuCrO2 films is lower compared to doped versions, indicating a need for further optimization through doping. The multi-phased films with structural disorder made direct band gap measurement challenging.
1：Experimental Design and Method Selection:
Cu–Cr–O films were synthesized using DC reactive magnetron sputtering with Cu and Cr metallic targets to control the [Cu]/[Cr] ratio. The films were annealed at 700 °C under Ar atmosphere to form crystal phases.
2：Sample Selection and Data Sources:
Fused silica substrates were used. Chemical compositions were determined by ESCA, structure by XRD, morphology by FESEM, optical properties by UV–vis spectrophotometer, and electrical properties by Hall-effect measurements.
3：List of Experimental Equipment and Materials:
High-vacuum dual-target sputter deposition system, Cu and Cr targets (4 in. diameter), fused silica substrates, Ar and O2 gases, tube furnace for annealing.
4：Experimental Procedures and Operational Workflow:
Sputtering deposition with fixed Cr-target power at 150 W and varying Cu-target power from 10 to 52 W, O2/(O2 + Ar) gas mass flow ratio of 75%, chamber pressure at
5：0 × 10?3 Torr, deposition at room temperature for 40 min, annealing at 700 °C for 2 h under Ar atmosphere. Data Analysis Methods:
XRD for phase identification and grain size calculation using Scherrer's formula, ESCA for chemical states, SEM for morphology, UV–vis for transmittance and reflectance, Hall-effect for electrical properties.
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