研究目的
Investigating the on-chip phase engineering of monolayer MoSe2 from the 2H to 1T′ phase using lithium intercalation, and evaluating its optical properties and reliability for electronics applications.
研究成果
The on-chip 2H to 1T′ transformation of monolayer MoSe2 is achievable and results in improved optical transparency and conductivity, but the process is hampered by stability issues, lithium intercalation challenges, and unreliable patterning, indicating that n-BuLi-induced phase engineering is not viable for practical electronics and should be approached with caution.
研究不足
The n-BuLi-based phase engineering is unreliable due to inconsistent patterning, instability of the 1T′ phase, potential exfoliation of monolayers, long reaction times, and inhomogeneous kinetics, making it unsuitable for scalable electronics applications.
1：Experimental Design and Method Selection:
The study involves chemical vapor deposition (CVD) growth of monolayer MoSe2, phase transformation via n-butyllithium exposure, and characterization using techniques such as XPS, Raman spectroscopy, PL analysis, transmission/reflection measurements, and DFT calculations to understand the phase transition and its effects.
2：Sample Selection and Data Sources:
Monolayer MoSe2 sheets grown on SiO2/Si and sapphire substrates using CVD with PTAS seeding. Samples were exposed to n-BuLi for phase transformation.
3：List of Experimental Equipment and Materials:
Equipment includes a tube furnace for CVD, Schlenk line for air-free chemistry, Horiba LabRAM HR Evolution for Raman and PL, XPS with monochromated Al K-alpha radiation, Nikon inverted microscope with halogen light source, Andor spectrometer with EM-CCD detector, AFM, SEM. Materials include MoO3 powder, Se powder, PTAS, n-BuLi in hexane, PMMA for patterning, argon and hydrogen gases.
4：Experimental Procedures and Operational Workflow:
CVD growth involved heating to 800°C with H2 introduction, n-BuLi exposure for 12 hours under argon, rinsing with hexane and IPA, characterization via XPS, Raman, PL, transmission/reflection measurements, and DFT calculations for energy analysis.
5：Data Analysis Methods:
XPS peak fitting for phase identification, Raman mode analysis for phase confirmation, PL suppression measurement, transmission/reflection spectra analysis, DFT for thermodynamic calculations using VASP with GGA and NEB method.
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