研究目的
To study the afterglow difference among RE2O3:Eu (RE=Lu, Y, Sc) systematically, investigate trap states, photoluminescence, and radioluminescence properties, and understand the influence of trap states and site preference on afterglow behavior.
研究成果
The afterglow intensity differences in RE2O3:Eu are primarily due to variations in trap states and site preferences. Sc2O3:Eu has lower afterglow due to the absence of Schottky defects, while Y2O3:Eu has slightly lower afterglow than Lu2O3:Eu due to a lower S6 site ratio. Eu(S6)→Eu(C2) energy transfer has negligible influence. This work enhances understanding of afterglow mechanisms in bixbyite-structured compounds and suggests defect or compositional engineering for improving scintillator performance.
研究不足
The study is limited to RE2O3:Eu compounds with identical structure and similar electronic properties; other host materials or dopants are not considered. The experimental conditions (e.g., specific temperatures, irradiation times) may not cover all possible scenarios, and the defect engineering strategies suggested are not experimentally validated in this paper.
1:Experimental Design and Method Selection:
Single crystals of RE2O3:1at%Eu (RE=Lu, Y, Sc) were grown using the optical floating zone method in air atmosphere. Correlated measurements included afterglow curves, thermoluminescence (TSL), photoluminescence (PL) decay, photoluminescence excitation (PLE), and radioluminescence (XEL) curves. Theoretical models such as the general-order kinetics model were used for TSL curve fitting.
2:Sample Selection and Data Sources:
Samples were prepared from 4N purity raw powders, cut and polished into plates of dimension about Ф5×1 mm3. Data were collected using various spectrometers and detectors.
3:Data were collected using various spectrometers and detectors. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included an optical floating zone furnace, X-ray tubes (tungsten, operated at different voltages and currents), PMTs (Hamamatsu R2059 and R928P), fluorescence spectrometer (Edinburg FLS 980), CCD detector (Jobin-Yvon Spectrum One 3000), spectrometer (Triax 180 Jobin-Yvon), and excitation sources (Xenon lamp, μF2 lamp). Materials were RE2O3:1%Eu single crystals.
4:Experimental Procedures and Operational Workflow:
Afterglow curves were measured after 2s continuous X-ray irradiation. PLE, PL, and PL decay curves were recorded at room temperature. XEL curves were measured with X-ray excitation. Wavelength-resolved TSL measurements were performed in the 78-350 K range with a heating rate of 0.2 K/s after irradiation at 77 K. All spectra were corrected for detection response.
5:2 K/s after irradiation at 77 K. All spectra were corrected for detection response. Data Analysis Methods:
5. Data Analysis Methods: TSL curves were fitted using the general-order kinetics model. PL decay curves were fitted with exponential functions. Data analysis involved comparing afterglow intensities, trap depths, emission spectra, and radioluminescence efficiencies.
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PMT
R2059
Hamamatsu
Detect afterglow luminescence.
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Fluorescence Spectrometer
FLS 980
Edinburg
Record PLE, PL, PL decay, and XEL curves.
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PMT
R928P
Hamamatsu
Detect scintillation luminescence in XEL measurements.
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X-ray tube
tungsten
Philips
Provide X-ray irradiation for afterglow and TSL measurements.
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CCD Detector
Spectrum One 3000
Jobin-Yvon
Perform wavelength-resolved TSL measurements.
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Spectrometer
Triax 180
Jobin-Yvon
Coupled with CCD detector for TSL measurements.
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Xenon Lamp
Excitation source for PLE and PL curves.
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μF2 Lamp
Excitation source for PL decay curves.
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