研究目的
To explore optical memory functions in nonvolatile organic field-effect transistor (OFET) memories with top-gate/bottom-contact (TG/BC) configurations for developing printable, high-density organic memory circuits capable of multi-level data storage.
研究成果
The solution-processed OFET memory devices with self-organized organic floating gates exhibit excellent nonvolatile optical memory characteristics, including large Vth shifts (~30 V) and stable charge retention under light illumination. They enable multi-level data storage by tuning programming voltage and light intensity, making them suitable for printable organic memory arrays and optical image sensors. Further reductions in programming and erasing voltages are desirable for practical applications.
研究不足
The programming and erasing voltages are relatively high (e.g., +60 V and -60 V), which may not be ideal for practical applications. The exact reason for the small dependence of Vth shift on wavelength is unclear, requiring further investigation. The erasing process is less effective than programming, and optimizations are needed to reduce driving voltages while retaining large Vth shifts.
1：Experimental Design and Method Selection:
The study involves fabricating TG/BC OFET memory devices using solution processes, specifically spin-coating, to create organic floating-gate structures. The methodology includes using a composite of TIPS-pentacene and PMMA for self-organization of floating gates on a P3HT semiconductor layer, with theoretical models based on energy band diagrams for programming and erasing processes.
2：Sample Selection and Data Sources:
Samples are fabricated on pre-cleaned glass substrates with Cr/Au source-drain electrodes. Organic materials include P3HT, TIPS-pentacene, PMMA, and CYTOP. Data is collected from electrical measurements of the OFET devices under various light illuminations.
3：List of Experimental Equipment and Materials:
Equipment includes a UV/O3 cleaner, spin coater, thermal annealing setup, atomic force microscope (AFM), polarized optical microscope (POM), impedance analyzer, Keithley source meters, LEDs for illumination, power meter, and O2 plasma etching system. Materials include regioregular P3HT, TIPS-pentacene, PMMA, CYTOP, chlorobenzene, n-butyl acetate, fluorinated solvent, Cr, Au, and Al.
4：Experimental Procedures and Operational Workflow:
The workflow involves substrate cleaning, electrode fabrication via photolithography and lift-off, spin-coating of P3HT, thermal annealing, spin-coating of PMMA:TIPS-pentacene composite, spin-coating of CYTOP, evaporation of Al gate electrodes, O2 plasma etching for device isolation, and final heating to remove dopants. Electrical characteristics are measured in a N2-filled glove box using source meters, with programming and erasing cycles performed under light illumination from LEDs.
5：Data Analysis Methods:
Data analysis includes calculating field-effect mobility and threshold voltage from transfer characteristics using the standard FET equation, measuring capacitances with an impedance analyzer, and analyzing surface morphologies with AFM and POM. Statistical analysis of Vth shifts and retention times is performed.
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atomic force microscope
JSPM-5200
JEOL
Investigate surface morphologies of organic films
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source meter
6430
Keithley
Measure electrical characteristics of OFET devices
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source meter
2400
Keithley
Measure electrical characteristics of OFET devices
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polarized optical microscope
ECLIPSE LV100D
Nikon
Investigate surface morphologies of organic films with birefringence
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impedance analyzer
Modulab M-H100
Solartron
Measure capacitances of gate insulator layers
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light-emitting diode
Provide blue, green, and red light illumination for programming
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power meter
Calibrate light intensities
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UV/O3 cleaner
Clean substrates to remove organic contaminants
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spin coater
Fabricate organic films by spin coating
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stylus profiler
Measure thicknesses of organic layers
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O2 plasma etching system
Remove organic layers outside active areas using Al gate electrodes as masks
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