研究目的

To clarify the fundamental physical process of the momentum and energy relaxation phenomenon in wurtzite GaN, InN, and AlN, understand the relationship of relaxation rate with electric field and temperature, and clarify the role of scattering mechanisms during the relaxation process.

研究成果

The momentum and energy relaxation processes in wurtzite GaN, InN, and AlN are significantly influenced by electric field and temperature, with different scattering mechanisms dominating under varying conditions. Momentum relaxation time is generally lower than energy relaxation time due to more scattering mechanisms affecting momentum. Nonlocal transport phenomena, such as velocity overshoot and undershoot, are important and vary with material properties, particularly effective mass. The findings can guide device design and provide inputs for energy balance models in semiconductor device simulation.

研究不足

The study is computational and based on simulations, which may not fully capture real-world device complexities or experimental variations. The Monte Carlo method has high computational cost, limiting its application in commercial device simulators. The research focuses on bulk materials and may not directly apply to specific device structures like 2DEG, and the parameters used are from literature, potentially introducing inaccuracies if not perfectly representative.