研究目的
To develop CdZnTe thick film radiation detectors with B and Ga co-doped ZnO contacts for improved stability and performance.
研究成果
The BGZO/CdZnTe/BGZO structure demonstrates good ohmic contact and adhesion, with a radiation detector achieving 25% energy resolution for 60KeV γ-rays, making it suitable for future large-area, low-cost imaging applications with further film quality enhancements.
研究不足
The energy resolution of 25% is lower than that of single crystal CdZnTe detectors (typically <10%), indicating room for improvement in film quality. The study is limited to specific deposition conditions and may not generalize to other parameters or larger scales.
1：Experimental Design and Method Selection:
The study used close-spaced sublimation (CSS) for CdZnTe film growth and RF-magnetron sputtering for BGZO film deposition to achieve high-quality films and good ohmic contacts.
2：Sample Selection and Data Sources:
BGZO films (20x20mm2, 300nm thick) were prepared on glass substrates; CdZnTe thick films were grown on these using high-purity CdZnTe powder.
3：List of Experimental Equipment and Materials:
Equipment includes RF-magnetron sputtering system, CSS setup, mechanical polisher, XRD (CuKα1, λ=
4：15406 nm), Raman spectrometer (Horiba JY HR800UV, Ar+ laser, 5 nm), SEM (JSM-7500F), EDS, Hall measurement system (Accent model HL5500PC), Keithley 4200 A-SCS, Ortec multichannel pulse-height analyzer. Materials include ZnO ceramic targets (99% purity, doped with 5wt% B and 5wt% Ga), CdZnTe polycrystalline powder (9999% purity), and 241Am γ-source. Experimental Procedures and Operational Workflow:
BGZO films were sputtered at 6mTorr vacuum and 150W power. CdZnTe films were grown via CSS at 2Pa pressure, source temperature 600°C, substrate temperature 400°C, distance 4mm, for 3 hours. Films were polished, cleaned, and top BGZO electrodes deposited. Characterization involved XRD, Raman, SEM, EDS, Hall measurements, I-V tests, and radiation detection with Ortec system.
5：Data Analysis Methods:
XRD for crystallinity, Raman for quality, SEM for morphology, EDS for composition, Hall for electrical properties, I-V fitting for ohmic contact coefficient, and pulse-height analysis for energy resolution.
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Scanning electron microscope
JSM-7500F
JEOL
Used for SEM imaging and EDS analysis.
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Semiconductor characterization system
Keithley 4200 A-SCS
Keithley
Used to characterize contact properties of electrodes.
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RF-magnetron sputtering system
Used for depositing BGZO films.
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Close-spaced sublimation system
CSS
Used for growing CdZnTe thick films.
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X-ray diffractometer
XRD with CuKα1, λ=0.15406 nm
Used to investigate the crystallinity of CdZnTe films.
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Raman spectrometer
Horiba JY HR800UV
Horiba
Used for Raman spectroscopy of CdZnTe films.
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Hall measurement system
Accent HL5500PC
Accent
Used to measure electrical properties of BGZO films via Van der Pauw method.
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Multichannel pulse-height analyzer
Ortec
Ortec
Used to test pulse-height spectra of radiation detectors.
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γ-ray source
241Am
Used as a radiation source for detector testing.
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