研究目的
To investigate the resonance reflection of light by ordered silicon nanopillar arrays with a vertical p-n junction, focusing on their optical and electrophysical properties for potential use in photonic sensors.
研究成果
The research successfully demonstrated strong resonance light scattering in Si NP arrays, with tunable optical properties based on diameter and pitch. High photosensitivity to visible and near-IR light was observed, making these structures promising for selective photonic sensors. Future work could optimize fabrication and theoretical models.
研究不足
The study is limited to Si NPs with medium aspect ratios (2-5), and the fabrication process may be constrained by etching depth and pitch size. The quantitative divergence from Mie theory indicates incomplete theoretical modeling, and surface roughness from passivation affects optical properties.
1：Experimental Design and Method Selection:
The study involved fabricating Si NP arrays using electron beam lithography with a negative resist and reactive ion etching. Optical and electrical measurements were conducted to analyze resonance reflection and photosensitivity.
2：Sample Selection and Data Sources:
Si (100) substrates with epitaxial p-n junctions were used. Arrays of Si NPs with diameters from 150 to 240 nm, heights of 0.5 μm, and pitches from 400 to 1000 nm were formed in square microarrays.
3：5 μm, and pitches from 400 to 1000 nm were formed in square microarrays. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes electron beam lithography systems (Pioneer or Raith 150), reactive ion etching setup (Oxford PlasmaLab-80), monochromator (FHR1000), photodetector, lock-in amplifier (Stanford Research SR830), microscope (Zeiss Axio Imager Z1), probe station (Cascade Microtech), and analyzer (Agilent B1500A). Materials include negative resist (ma-N-2403), developer (ma-D 532), and silicon substrates.
4：Experimental Procedures and Operational Workflow:
The process involved resist coating, electron beam exposure, development, reactive ion etching, reflection spectrum measurement using a halogen lamp and objectives, passivation in nitric acid, microwave annealing, and electrical measurements of I-V characteristics and responsivity.
5：Data Analysis Methods:
Reflection spectra were analyzed for minima positions, and responsivity was calculated from photocurrent measurements. Comparisons were made with Mie resonance theory.
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reactive ion etching system
Oxford PlasmaLab-80
Oxford Instruments
Used for etching silicon to form nanopillars through the resist mask.
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lock-in amplifier
SR830
Stanford Research Systems
Used with the photodetector for sensitive measurement of reflected light signals.
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microscope
Zeiss Axio Imager Z1
Carl Zeiss
Used for investigating resonant reflectance with dark field and bright field detectors.
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analyzer
B1500A
Agilent
Used for measuring current-voltage characteristics and photoresponse.
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electron beam lithography system
Pioneer or Raith 150
Raith or unspecified
Used for exposing the electron beam resist to create patterns for Si NP arrays.
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monochromator
FHR1000
Unspecified
Used to measure reflection spectra by dispersing light.
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probe station
Unspecified
Cascade Microtech
Coupled with the analyzer for electrical measurements on Si NP arrays.
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negative electron resist
ma-N-2403
Micro Resist Technology GmbH
Used as a mask for electron beam lithography to define nanopillar patterns.
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developer
ma-D 532
Micro Resist Technology GmbH
Used to develop the exposed electron beam resist.
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objective
Olympus ×10, Olympus ×100, Mitutoyo ×50
Olympus, Mitutoyo
Used to focus light onto the sample and collect reflected light during spectrum measurements.
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