研究目的
To analyze the behavior of silicon carbide power MOSFETs with respect to conduction and switching losses using TCAD device simulations, and to investigate the sensitivity of these losses to process variations in device manufacturing.
研究成果
TCAD simulations reveal that conduction and switching losses in SiC power MOSFETs are highly sensitive to process variations, with drift layer properties becoming more critical at higher breakdown voltages. Sensitivity of reverse recovery charge has a negligible influence on total switching losses for the studied device, but this may change with increased voltage. Future work should focus on optimizing drift layer properties for high-voltage applications.
研究不足
The study relies on simulations, which may not fully capture real-world complexities; parasitics of the measuring circuit are not considered in switching loss simulations, potentially affecting accuracy. The analysis is specific to SiC MOSFETs and may not generalize to other semiconductor devices.
1：Experimental Design and Method Selection:
TCAD device simulations are used to model and analyze SiC power MOSFETs, focusing on conduction and switching losses. The methodology includes sensitivity analysis of on-resistance components and reverse recovery charge to process variations.
2：Sample Selection and Data Sources:
Device designs with varying breakdown voltages are simulated, based on Wolfspeed's second generation 1.2 kV SiC power MOSFET as a reference. Validation is done using measurements from ten devices in TO-247 packages.
3：2 kV SiC power MOSFET as a reference. Validation is done using measurements from ten devices in TO-247 packages.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: TCAD simulation software (specific model not named), SiC MOSFET devices, measurement equipment for validation (not specified).
4：Experimental Procedures and Operational Workflow:
Simulations involve changing epi layer thickness and doping concentration to vary breakdown voltages, extracting specific on-resistance and its components, and analyzing the effects of interface mobility, drift doping, and p-body doping variations. Mixed-mode simulations are used for switching loss analysis.
5：Data Analysis Methods:
Data is analyzed by extracting voltage differences and current values, comparing with measurements, and using statistical methods to assess sensitivity (e.g., percentage changes in resistance and charge).
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