1：Experimental Design and Method Selection:

The study uses microwave plasma chemical vapor deposition (MPCVD) to grow diamond films on (100) silicon substrates, focusing on nucleation and growth stages with varied parameters. The Lotgering factor is used to quantify orientation.

2：Sample Selection and Data Sources:

(100) silicon substrates are used, seeded with diamond nanoparticles via spin coating. Data is collected from XRD, Raman spectroscopy, SEM, and I-V measurements.

3：List of Experimental Equipment and Materials:

MPCVD system (ARDIS-100, 5 kW, 2.45 GHz), X-ray diffractometer (D/MAX 2500), Raman spectrometer (JY, HR800UV), SEM (JSM-6701F), Keithley 4200 semiconductor characterization system, hydrogen and methane gases (purity >99.999%), diamond suspension (~5 nm particles), H2SO4/HNO3 acid solution, Au electrodes.

4：45 GHz), X-ray diffractometer (D/MAX 2500), Raman spectrometer (JY, HR800UV), SEM (JSM-6701F), Keithley 4200 semiconductor characterization system, hydrogen and methane gases (purity >999%), diamond suspension (~5 nm particles), H2SO4/HNO3 acid solution, Au electrodes. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Substrates are seeded and placed in the MPCVD system. Nucleation and growth are performed with controlled CH4 concentration, time, pressure, microwave power, and substrate temperature. Post-deposition, films are oxidized, electrodes are fabricated, and characterization is done using XRD, Raman, SEM, and I-V measurements.

5：Data Analysis Methods:

XRD patterns are analyzed for orientation using the Lotgering factor. Raman spectra are decomposed into peaks for phase identification. SEM images are used for morphological analysis. I-V curves are measured for electrical resistance.