研究目的
To design and implement a high-performance mixed-voltage digital output buffer that interfaces between internal low voltage and external high voltage, operating over a wide voltage range (1.6V to 5.6V) and achieving high data rates (up to 20 Mbps).
研究成果
The improved digital push-pull output buffer demonstrated significant performance enhancements, including a 50% reduction in maximum delay at 1.6V (from 28.1 ns to 14.2 ns), faster rise and fall times, and the ability to operate at higher data rates (20 Mbps vs. 10 Mbps). Additionally, current consumption was reduced by up to 20%. These improvements make the buffer suitable for high-speed mixed-voltage applications in portable devices.
研究不足
The study is based on simulations using HSPICE, and actual physical implementation and testing in a real chip were not conducted. The performance is evaluated under specific conditions (e.g., 30pF load), and variations in load or other environmental factors may affect results. The process technology is specific to a 0.18μm CMOS EEPROM process, which may limit generalizability to other technologies.
1：Experimental Design and Method Selection:
The study involved designing and simulating an improved push-pull output buffer using a 0.18μm CMOS EEPROM process with low and high voltage transistors. The methodology included HSPICE simulations to evaluate performance parameters such as rise time, fall time, propagation delay, and current consumption under varying supply voltages and temperatures.
2：18μm CMOS EEPROM process with low and high voltage transistors. The methodology included HSPICE simulations to evaluate performance parameters such as rise time, fall time, propagation delay, and current consumption under varying supply voltages and temperatures.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Simulations were conducted with a capacitive load of 30pF, data rates of 10 Mbps and 20 Mbps, and supply voltages of 1.6V and 5.6V. Temperature variations from -40°C to 125°C and process corners were considered.
3：6V and 6V. Temperature variations from -40°C to 125°C and process corners were considered.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The primary tool used was HSPICE simulation software. The process technology is a 0.18μm CMOS EEPROM process with low voltage and high voltage (20V) transistors.
4：18μm CMOS EEPROM process with low voltage and high voltage (20V) transistors.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The buffer was designed with topology improvements, including the use of a faster n-MOS transistor with lower threshold voltage, elimination of certain level shifters, and modifications to reduce delays. Simulations were run to generate waveforms and measure timing parameters and current consumption.
5：Data Analysis Methods:
Data from simulations were analyzed to compute rise time, fall time, propagation delays, and average current consumption. Results were compared between the standard and improved buffer topologies.
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