研究目的
Investigating the spin-lattice relaxation (T1) and spin coherence time (T2) of the neutral silicon vacancy center (SiV0) in diamond, focusing on their temperature dependence and anisotropy with respect to magnetic-field orientation, to understand the underlying physical processes for quantum technology applications.
研究成果
The spin relaxation in SiV0 at high temperatures is dominated by an Orbach process with strong anisotropy dependent on magnetic-field orientation. T2 exhibits the same temperature dependence as T1 but is much shorter, explained by phonon-mediated transitions to a low-lying excited state. A model with a singlet excited state fits the data well, suggesting potential for high-temperature quantum applications, but further spectroscopy is needed to confirm the state's nature.
研究不足
The study is limited to temperatures above 20 K where the Orbach process dominates; lower temperature behavior is not fully explored. The identity of the excited state at 16.8 meV is not definitively identified, and the models (singlet or triplet) require further validation. Sample imperfections and density effects may influence results, and the anisotropy measurements are sensitive to alignment accuracy.
1:Experimental Design and Method Selection:
The study used pulsed electron spin resonance (ESR) at X-band frequency (9.7 GHz) to measure T1 and T2 of SiV0 centers in diamond samples. The Orbach process model was employed to explain the temperature and orientation dependence of spin relaxation.
2:7 GHz) to measure T1 and T2 of SiV0 centers in diamond samples. The Orbach process model was employed to explain the temperature and orientation dependence of spin relaxation. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Two high-purity {110} diamonds were used: D1 (doped with boron and silicon during growth, annealed, with SiV0 concentration of 4 × 10^16 cm^-3) and D2 (doped with boron and implanted with silicon, with SiV0 concentration of 5.1 × 10^15 cm^-3). Data were collected from ESR spectra and time-resolved measurements.
3:1 × 10^15 cm^-3). Data were collected from ESR spectra and time-resolved measurements. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes a Bruker Elexsys 580 system with a 1.4-T electromagnet, dielectric resonator (Bruker MD5), vector microwave source (Agilent E8267D), cryostat (Oxford CF935), laser (532 nm), amplifiers, switches, and digitizing boards. Materials include diamond samples with specific dopants and isotopes.
4:4-T electromagnet, dielectric resonator (Bruker MD5), vector microwave source (Agilent E8267D), cryostat (Oxford CF935), laser (532 nm), amplifiers, switches, and digitizing boards. Materials include diamond samples with specific dopants and isotopes. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: T1 was measured using a three-pulse inversion recovery sequence, and T2 was measured using a two-pulse Hahn echo sequence with optical spin polarization. The magnetic field orientation was varied, and temperature was controlled from 5 K to higher temperatures.
5:Data Analysis Methods:
Data were fitted using Arrhenius plots and rate equations for the Orbach process. Numerical simulations were performed for dipolar interactions and spin relaxation models.
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Electron Spin Resonance System
Elexsys 580
Bruker
Used for pulsed electron spin resonance measurements to study spin relaxation and coherence times.
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Dielectric Resonator
ER-4118X-MD5
Bruker
Cylindrical resonator for ESR experiments, providing a high-quality factor for microwave excitation.
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Vector Microwave Source
E8267D
Agilent
Generates microwave signals for ESR excitation and detection.
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Cryostat
CF935
Oxford
Helium-flow cryostat for temperature-controlled experiments from 5 K to higher temperatures.
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Digitizing Board
SpecJet
Bruker
Fast digitizing board for reading in-phase and quadrature signals from the mixer in ESR detection.
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PulseBlaster Board
ESR-PRO
Bruker
Controls triggering and pulse sequences for ESR experiments.
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Laser
Optical excitation source at 532 nm for spin polarization in ESR measurements.
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Amplifier
AR 20S4G11
AR
Solid-state amplifier for boosting microwave power in the excitation channel.
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Switch
HMC547
Hittite
Fast microwave switch for redirecting signals in the ESR setup to protect amplifiers and for detection.
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Amplifier
LNF-LNC4_16B
Low Noise Factory
Cryogenic low-noise amplifier for amplifying reflected microwave signals in ESR detection.
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