研究目的
To develop an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode and a direct parameter extraction technique based on nonlinear rational function fitting.
研究成果
The proposed distributed small-signal model and parameter extraction technique for SiGe HBTs show excellent agreement with measured data across a wide frequency range and multiple bias points, providing high accuracy for evaluating fabricated processes and optimizing transistor design.
研究不足
The model uses approximations in simplifying hyperbolic functions, which may limit accuracy at very high frequencies; higher-order corrections are not implemented due to complexity. The extraction method relies on specific bias conditions and device geometry.
1：Experimental Design and Method Selection:
The study uses transmission line theory to model the distributed effects in SiGe HBTs, deriving closed-form admittance parameters and employing nonlinear rational function fitting for parameter extraction.
2：Sample Selection and Data Sources:
A 1×
3：2×30 μm2 SiGe HBT fabricated by HuaHong Semiconductor Company is used, with S-parameters measured from 100 MHz to 89 GHz using an on-wafer RF probe system and network analyzer. List of Experimental Equipment and Materials:
Agilent PNA-X network analyzer, on-wafer RF probe system, calibration substrate, SiGe HBT devices.
4：Experimental Procedures and Operational Workflow:
S-parameters are measured in common emitter configuration, calibrated using short-open-load-thru method, and pad parasitics are de-embedded. Parameters are extracted using rational function fitting and validated through simulation.
5：Data Analysis Methods:
Nonlinear rational function fitting is applied to admittance parameters, and residual error is calculated to assess accuracy.
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