研究目的
To investigate the effects of Ar and O2 plasma treatments on Au surface properties for room-temperature wafer-scale Au-Au bonding.
研究成果
Ar plasma treatment is more suitable than O2 plasma for room-temperature wafer-scale Au-Au bonding, as it provides strong bonding without oxide formation, whereas O2 plasma forms Au2O3 that weakens the bond.
研究不足
The study is limited to specific plasma treatment times and conditions; other gases or parameters were not explored. Bonding was only tested at room temperature in ambient air, which may not cover all environmental conditions. The use of thin Au films might not be generalizable to thicker layers.
1：Experimental Design and Method Selection:
The study compared Ar and O2 plasma treatments as pretreatments for Au-Au bonding. Surface analysis included AFM for roughness, sheet resistance measurement, and XPS for composition. Bonding was performed at room temperature in ambient air, with strength measured using a razor blade test.
2：Sample Selection and Data Sources:
Au thin films (15 nm thickness) with Ti adhesion layers (5 nm thickness) deposited on Si substrates by DC sputtering were used.
3：List of Experimental Equipment and Materials:
AFM (Atomic Force Microscope), sheet resistance measurement system, XPS (X-ray Photoelectron Spectroscopy), razor blade for blade test, IR camera for crack observation, Si wafers, Au and Ti films, Ar and O2 plasma sources.
4：Experimental Procedures and Operational Workflow:
Plasma treatment (Ar or O2) was applied to Au films for specified times (e.g., 30 s, 60 s). Surface properties were measured post-treatment. Bonding involved contacting two wafers. Blade test inserted a razor blade to measure crack length and calculate bonding energy.
5：Data Analysis Methods:
Bonding energy γ was calculated using the formula involving Young's modulus, blade thickness, wafer thickness, and crack length. Statistical analysis of surface roughness and resistance changes was performed.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
