研究目的
To study the effect of dual field-plates on current collapse in AlGaN/GaN MOS-HEMTs and evaluate their performance using pulsed I-V techniques.
研究成果
The dual-FP structure effectively suppressed current collapse in AlGaN/GaN MOS-HEMTs, enabling current collapse-free operation up to 100 V drain voltage with high positive gate voltage application, indicating its potential for high-voltage power switching applications.
研究不足
The study may be limited by the specific device parameters and materials used; further optimization of FP dimensions and materials could be explored for broader applications.
1：Experimental Design and Method Selection:
Fabricated AlGaN/GaN MOS-HEMTs with various field-plate parameters, including dual-FP (gate-FP and source-FP), and evaluated DC and pulsed I-V characteristics to study current collapse suppression.
2：Sample Selection and Data Sources:
AlGaN/GaN heterostructures grown by MOCVD on SiC substrates with 20% Al composition; devices with specific dimensions (e.g., gate length 3 μm, gate width 100 μm).
3：List of Experimental Equipment and Materials:
MOCVD for growth, electron beam evaporation for ohmic contacts (Ti/Al/Mo/Au), rapid thermal annealing at 850°C, atomic layer deposition for Al2O3 gate oxide, sputtering for SiN and SiO2 passivation, and metal deposition for electrodes.
4：Experimental Procedures and Operational Workflow:
Fabrication involved ohmic contact formation, gate oxide deposition, gate contact deposition, passivation layer deposition, and field-plate electrode deposition; characterization included DC I-V and pulsed I-V measurements.
5：Data Analysis Methods:
Analyzed normalized dynamic Ron (NDR) as a function of VDS_off and VGS_on to evaluate current collapse behavior.
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