研究目的
To demonstrate and investigate threshold switching and memory behaviors in epitaxially regrown GaN-on-GaN vertical p-n diodes, particularly focusing on their high-temperature stability and potential applications in GaN-based memory devices and integrated circuits.
研究成果
The epitaxially regrown GaN-on-GaN vertical p-n diodes exhibit reproducible threshold switching and memory behaviors with high endurance (over 1000 cycles) and stability up to 300°C. The set voltage increases with temperature due to enhanced thermal detrapping, and memory behavior is observed at reset voltages above 4.4 V. This work provides a foundation for developing high-temperature GaN-based memory devices, with future efforts needed to lower set voltage and HRS current.
研究不足
The set voltage is relatively high (~15 V at room temperature), and the high resistance state (HRS) current may need reduction for better performance. The physical mechanism details are still under investigation, and further work is required to optimize device parameters for practical applications.
1：Experimental Design and Method Selection:
The study involves designing and fabricating trench-type p-n diode structures with regrowth interfaces to reveal memory effects. Metalorganic chemical vapor deposition (MOCVD) is used for growth, and inductively coupled plasma (ICP) etching is employed for patterning and mesa isolation. Current-voltage (I-V) characteristics are measured to analyze switching behaviors.
2：Sample Selection and Data Sources:
Samples are homoepitaxially grown on c-plane n-GaN substrates from Sumitomo Electric Industries Ltd. with a carrier concentration of ~1018 cm?
3：Devices include two types:
device A with a trench structure and device B without, for reference.
4：List of Experimental Equipment and Materials:
Equipment includes MOCVD system, ICP etcher, electron-beam evaporator for electrode deposition, and Keithley 2400 sourcemeter for I-V measurements. Materials include n-GaN substrates, precursors (TMGa, NH3, SiH4, Cp2Mg), and metal stacks (Ti/Al/Ni/Au, Pd/Ni/Au).
5：Experimental Procedures and Operational Workflow:
Growth involves depositing UID GaN and n+-GaN layers, etching to form patterns, regrowing UID-GaN and p-GaN layers, etching for contacts and mesa isolation, depositing electrodes, and performing I-V measurements with specified compliance current and voltage steps.
6：Data Analysis Methods:
I-V curves are analyzed to identify threshold switching and memory behaviors, using trap-assisted space charge limited current (SCLC) theory for interpretation. Endurance and temperature-dependent tests are conducted with statistical analysis of set/reset voltages and currents.
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