研究目的
To develop a parallelized and versatile harmonic balance method for efficient frequency-domain analysis of semiconductor devices, enabling both small-signal and large-signal simulations with reduced computational cost.
研究成果
The proposed harmonic balance method, enhanced with parallelization and the Isofrequency Remapping Scheme, efficiently captures both linear and non-linear frequency responses in semiconductor devices, significantly reducing computational costs compared to time-domain simulations and enabling multi-tone analyses.
研究不足
The method may exhibit artifacts like Gibbs phenomenon due to truncation in harmonic balance, and it is specific to the implemented TCAD code (Charon), though it can be adapted to other discretization schemes. High-frequency simulations require careful handling to avoid inaccuracies.
1：Experimental Design and Method Selection:
The method involves adapting a time-domain TCAD code to the frequency domain using harmonic balance techniques, incorporating both small-signal and large-signal analyses. It utilizes Fourier transforms and an Isofrequency Remapping Scheme to handle high frequencies efficiently.
2：Sample Selection and Data Sources:
Simulations are performed on a symmetric PN diode model, with applied voltages at various frequencies (e.g., 1 MHz,
3：1 MHz, up to 10 GHz) to test linear and non-linear responses. List of Experimental Equipment and Materials:
The Charon MPI-parallel TCAD code is used for simulations. No specific hardware details are provided.
4：Experimental Procedures and Operational Workflow:
The process includes transforming time-domain equations to frequency-domain using harmonic balance, applying the remapping scheme to reduce computational expense, and comparing results with time-domain simulations.
5：Data Analysis Methods:
Results are analyzed by comparing harmonic balance outputs with time-domain simulations, using plots of current-voltage characteristics and frequency spectra.
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