研究目的
To develop a methodology for chemical imaging of buried interfaces in organic-inorganic hybrid materials using FIB-ToF-SIMS, including a clean-up process to remove FIB-induced damage, and to evaluate this methodology on additive manufactured devices.
研究成果
FIB-ToF-SIMS with GCIB clean-up is effective for chemical imaging of buried interfaces in organic-inorganic hybrid materials. The method successfully removes FIB-induced damage, with optimal doses identified for different polymers. Gallium is recommended over bismuth for milling due to better performance. Applications to 3D printed devices show clear interface imaging with resolutions around 440 nm, demonstrating the utility for advanced manufacturing and material characterization.
研究不足
The FIB milling process damages organic materials, which may limit application to sensitive organic-inorganic systems. The clean-up process requires optimization for different polymers, and overcleaning can compromise spatial resolution. The method's effectiveness depends on the specific materials and FIB parameters used.
1:Experimental Design and Method Selection:
The study uses a test device based on a microchannel plate filled with polymers (PS or PMMA) to study FIB milling and SIMS imaging. A clean-up process with an argon gas cluster ion beam (GCIB) is employed to remove damage.
2:Sample Selection and Data Sources:
Test devices include polymer-filled microchannel plates, a 3D printed encapsulated strain sensor (Device A), and a copper track on PET substrate (Device B).
3:List of Experimental Equipment and Materials:
Equipment includes a TOF.SIMS 5 instrument (IONTOF GmbH), Ga+ FIB, Bi+ LMIG, Ar+ GCIB, and materials like polystyrene, PMMA, silver nanoparticle ink, and copper nanoparticles.
4:Experimental Procedures and Operational Workflow:
FIB milling is performed with Ga+ beam to create craters, followed by GCIB sputtering for clean-up. SIMS imaging is conducted using Bi3+ beam. Samples are rotated for optimal analysis.
5:Data Analysis Methods:
Secondary ion signals are monitored during clean-up, and intensity profiles are analyzed to assess interface resolution and damage removal.
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