研究目的
To review and analyze a super-steep subthreshold slope body-tied SOI MOSFET fabricated with 0.15 μm SOI technology and discuss its potential for ultralow voltage applications, including investigating the mechanism, optimizing device parameters, and controlling threshold voltage and hysteresis characteristics.
研究成果
The BT SOI MOSFET demonstrates super-steep SS (< 1 mV/dec) with reduced operation voltage down to 2.2 V and an ION/IOFF ratio of 2.5×10^4 at Vd=3.0 V. The mechanism involves voltage drops in the body inducing parasitic bipolar transistor action. Optimizations include longer gate width, shorter gate length, and thinner Si thickness within partial depletion range. The device allows control of threshold voltage and hysteresis, making it promising for ultralow voltage applications, though future work is needed on high-speed switching.
研究不足
The study relies on specific 0.15 μm SOI technology, which may limit generalizability to other technologies. The TCAD simulation requires parameter fitting, which could introduce inaccuracies. The devices exhibit hysteresis and require further optimization for high-speed switching applications. The operation voltage, while reduced, is still above ideal ultralow levels, and the ION/IOFF ratio may need improvement for practical use.
