研究目的
To enhance the breakdown voltages and stabilities of diamond Schottky barrier diodes using boron implanted edge terminations.
研究成果
Boron implanted edge terminations significantly improve the breakdown voltages and stabilities of diamond Schottky barrier diodes, with an average breakdown voltage increase of over 50% and enhanced device stability, despite an increase in leakage currents. This method is effective for enhancing the performance of diamond power devices.
研究不足
The study used boron as the only available implant species, which may not be optimal; other species could yield different results. The increase in leakage currents at low reverse voltages is a drawback. The drift layer thickness is very thin (310 nm), which might limit scalability or performance in thicker layers. The research is focused on specific device geometries and may not generalize to all diamond SBD designs.
1：Experimental Design and Method Selection:
The study involved fabricating diamond Schottky barrier diodes (SBDs) with and without boron implanted edge terminations to compare their electrical characteristics. Boron implant was used to create nonconductive amorphous regions under the Schottky contact edges to reduce peak electric fields and improve breakdown voltage.
2：Sample Selection and Data Sources:
A IIb-type 3×3×
3：3 mm high-pressure high-temperature (HPHT) (100)-oriented p+ single crystal diamond substrate with a heavy boron doping concentration of about 5×1019 cm-3 was used. A 310 nm thick lightly boron doped drift layer with doping concentration of about 1×1015 cm-3 was grown on the substrate by microwave plasma chemical vapor deposition (MPCVD). List of Experimental Equipment and Materials:
Equipment included an Agilent B1500A semiconductor analyzer for electrical measurements, electron beam evaporation for metal deposition, photolithography for patterning, and ion implantation for boron doping. Materials included Ti/Au metal stacks, photoresist, potassium iodide (KI) solution, hydrofluoric acid solution, nitric acid, sulfuric acid, acetone, ethanol, deionized water, and oxygen plasma.
4：Experimental Procedures and Operational Workflow:
The substrate was cleaned and treated. Ohmic contacts were formed on the back side with Ti/Au and annealed. Ring patterns for implant were defined by photolithography, and a Ti/Au metal mask was evaporated. Boron ions were implanted with a dose of 5×1014 cm-2 at 30 keV. The mask was removed, and Schottky electrodes were fabricated with Ti/Au. Electrical measurements were performed at room temperature.
5：Data Analysis Methods:
Forward currents, on-resistances, leakage currents, and breakdown voltages were measured. Breakdown voltage was defined at a leakage current density of 10 A/cm2. Data were analyzed to calculate current densities, specific on-resistances, and average breakdown voltages.
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