研究目的
To develop a quantum-mechanical model for phonon-assisted tunneling (PAT) currents in direct-bandgap semiconductors, as a step towards accurate assessment of trap-assisted tunneling in tunnel ?eld-effect transistors.
研究成果
The multi-band PAT formalism is computationally efficient and applicable to direct-bandgap devices. PAT currents are comparable to band-to-band tunneling currents, with inefficient electron-phonon coupling across tunneling junctions due to parity differences in basis functions. PAT current density increases with device length and shows doping dependence, influenced by tunneling energy windows and near-tunneling region lengths. Future work should extend to heterostructures and multi-phonon processes for trap-assisted tunneling assessment.
研究不足
The formalism is non-self-consistent and neglects changes in the electron distribution function due to electron-phonon coupling, which may overestimate PAT current dependence on device length. Computational resources limit the study to specific device sizes and band models.
1：Experimental Design and Method Selection:
A multi-band PAT current formalism is derived within the quantum transmitting boundary method framework, using an envelope function approximation for electron-phonon coupling in direct-bandgap III-V semiconductors. Numerical implementation is done with a k·p-based full-zone quantum-mechanical simulator (Pharos) for efficiency.
2：Sample Selection and Data Sources:
Simulations are performed on homostructure In0.53Ga0.47As p-n diodes with dimensions up to 100 nm long and 20 nm wide, with abrupt and uniform dopant profiles.
3：53Ga47As p-n diodes with dimensions up to 100 nm long and 20 nm wide, with abrupt and uniform dopant profiles.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Computational tools and software (Pharos simulator) are used; no physical equipment is mentioned.
4：Experimental Procedures and Operational Workflow:
The PAT current density is calculated using derived equations, involving integrations over energy, wave vectors, and device dimensions. Mesh sizes of 0.1 nm along x and 0.2 nm along z are used in simulations.
5：1 nm along x and 2 nm along z are used in simulations.
Data Analysis Methods:
5. Data Analysis Methods: Statistical averages using Fermi-Dirac and Bose-Einstein statistics, delta functions for energy conservation, and numerical integrations with adaptive discretization are employed.
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