研究目的
To study the impact of lateral scaling on self-heating mechanisms in GaN HEMTs fabricated on Si substrates using a cellular Monte Carlo particle-based device simulator.
研究成果
Lateral scaling of GaN HEMTs improves electrical performance but increases channel temperatures by up to 15%, with hot spots shifted toward the drain. This necessitates thermal management strategies to maintain reliability.
研究不足
The simulations are limited to a specific device model and may not generalize to all GaN HEMTs. The thermal conductivity model assumes piecewise functions and may not fully capture heterojunction effects. Computational costs restrict the buffer thickness to 1000nm instead of full substrate dimensions.
1：Experimental Design and Method Selection:
A cellular Monte Carlo (CMC) particle-based device simulator is used, incorporating an energy-balance equation for phonons to self-consistently couple charge and heat transport. The model is calibrated to experimental dc characteristics.
2：Sample Selection and Data Sources:
The model is based on an experimental GaN-on-Si HEMT device reported by Altuntas et al., with specific dimensions (e.g., gate length LG=75nm, source-gate LSG=500nm, gate-drain LGD=925nm).
3：List of Experimental Equipment and Materials:
The simulation involves a T-gate HEMT on Si {111} substrate with an epitaxial stack; computational tools include a CMC framework and a multigrid Poisson solver.
4：Experimental Procedures and Operational Workflow:
Simulations start with an isothermal CMC run, then compute the self-heating forcing function, solve the heat equation, and iterate until convergence. Temperature maps and electrical profiles are analyzed for scaled devices.
5：Data Analysis Methods:
Results include temperature maps for acoustic and optical phonon modes, electric field profiles, carrier velocity, and dc characteristics, compared under constant power or electric field conditions.
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