研究目的
To investigate the influence of annealing temperature on the photoluminescence properties of CePO4 thin films prepared by electron beam evaporation on silicon substrates.
研究成果
The nanostructured CePO4 thin films exhibit strong ultraviolet emission with optimal photoluminescence intensity at 900 °C annealing in nitrogen. Higher temperatures lead to violet/blue emission due to formation of cerium silicates, as confirmed by PL, PLE, XRD, SEM, and EDS analyses. These findings suggest potential for silicon-based light-emitting devices, with recommendations for future work on doped films and device integration.
研究不足
The study is limited to pure CePO4 thin films without doping; annealing effects are investigated only up to 1100 °C in nitrogen atmosphere, and potential applications are suggested but not experimentally validated in devices. Optimization of deposition parameters and scalability for industrial use are not addressed.
1:Experimental Design and Method Selection:
The study used electron beam evaporation to deposit CePO4 thin films on silicon substrates, followed by annealing at various temperatures in nitrogen atmosphere to study their photoluminescence properties. Theoretical models for crystal structure and luminescence mechanisms were referenced.
2:Sample Selection and Data Sources:
High-purity CePO4 powders (99.99%) were used as initial materials, compressed into tablets, and deposited onto Si substrates. Samples were annealed at temperatures from 700 to 1100 °C for 30 min in N
3:99%) were used as initial materials, compressed into tablets, and deposited onto Si substrates. Samples were annealed at temperatures from 700 to 1100 °C for 30 min in NList of Experimental Equipment and Materials:
2. 3. List of Experimental Equipment and Materials: Electron beam evaporation system (EVA450), tablet press machine (769YP-24B), quartz crystal thickness monitor, fluorescence spectrometer (FLS920) with 450 W xenon lamp, X-ray diffractometer (Bruker D8 ADVANCE), scanning electron microscope (Hitachi S-4800), energy-dispersive X-ray spectroscopy (EDS) attached to SEM.
4:Experimental Procedures and Operational Workflow:
Films were deposited at room temperature in high vacuum (2.2 × 10^-3 Pa) with electron gun voltage of 6 kV and current of 0.85 A, evaporation rate controlled at 0.8–1.2 ?/s to achieve 160 nm thickness. Annealing was done in N2 for 30 min. PL and PLE spectra were measured using the spectrometer, XRD for crystal structure, SEM for morphology, and EDS for elemental analysis, all at room temperature.
5:2 × 10^-3 Pa) with electron gun voltage of 6 kV and current of 85 A, evaporation rate controlled at 8–2 ?/s to achieve 160 nm thickness. Annealing was done in N2 for 30 min. PL and PLE spectra were measured using the spectrometer, XRD for crystal structure, SEM for morphology, and EDS for elemental analysis, all at room temperature. Data Analysis Methods:
5. Data Analysis Methods: XRD patterns were compared to JCPDF standards, PL intensity trends were analyzed with annealing temperature, SEM images were used to assess crystallinity, and EDS data were tabulated for elemental concentrations.
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X-ray Diffractometer
D8 ADVANCE
Bruker
Characterized the crystal structures of the films using Cu Kα radiation.
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Scanning Electron Microscope
S-4800
Hitachi
Studied the surface morphologies of the films and was used for energy-dispersive X-ray spectroscopy (EDS) to measure elemental concentrations.
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Electron Beam Evaporation System
EVA450
Used for depositing CePO4 thin films onto silicon substrates by evaporating high-purity CePO4 powders.
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Tablet Press Machine
769YP-24B
Used to compress CePO4 powders into tablets for use as core materials in the evaporation process.
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Quartz Crystal Thickness Monitor
Monitored the thickness and deposition rate of the films during evaporation.
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Fluorescence Spectrometer
FLS920
Measured photoluminescence (PL) and photoluminescence excitation (PLE) spectra using a 450 W xenon lamp as the excitation source.
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Energy-Dispersive X-ray Spectroscopy
Hitachi
Attached to the SEM to determine the concentration of different elements in the films.
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