1：Experimental Design and Method Selection:

VGNs were synthesized using plasma enhanced chemical vapor deposition (PECVD) with CH4, H2, and Ar gases. The growth temperature was varied from 650°C to 850°C to study defect transformation. Characterization methods included SEM, Raman spectroscopy, XPS, NEXAFS, UPS, four-point probe for sheet resistance, and contact angle measurement for wettability.

2：Sample Selection and Data Sources:

Si substrates (1 cm x 1 cm) were cleaned and used for VGN growth. Samples were labeled S1 to S5 based on growth temperatures of 650°C, 700°C, 750°C, 800°C, and 850°C, respectively.

3：List of Experimental Equipment and Materials:

PECVD reactor, ultrasonic cleaner, SEM (ZEISS SUPRA55), Raman spectrometer (Renishaw RM3000 with 633 nm laser), XPS, NEXAFS, UPS (beamline 4B9B at BSRF), four-point probe system (280SI), contact angle measurement instrument (JCY-1), Si wafers, CH4, H2, Ar gases, acetone, alcohol, deionized water.

4：Experimental Procedures and Operational Workflow:

Substrates were cleaned ultrasonically, pre-treated with H2/Ar plasma at 400°C, then VGNs were deposited at specified temperatures and pressures for 25 minutes. Post-deposition, samples were cooled under H2 and CH4 atmosphere. Characterization was performed using the listed equipment under specified conditions.

5：Data Analysis Methods:

Raman spectra were analyzed for D, G, D', and G' bands; XPS spectra were fitted with Lorentz-Gauss functions; NEXAFS and UPS spectra were normalized and compared; sheet resistance and wetting angles were measured directly.