1：Experimental Design and Method Selection:

The study involved synthesizing Zn2SnO4 powder via solid-state reaction, depositing thin films using electron beam evaporation, and annealing them at various temperatures to investigate structural, optical, and electrical changes.

2：Sample Selection and Data Sources:

Si substrates were used for thin film deposition; samples included as-deposited and annealed films at 400°C, 500°C, and 600°C.

3：List of Experimental Equipment and Materials:

Equipment included Bruker D8 X-ray diffractometer, NanoscopeIIIa AFM, UV-Vis spectrophotometer, RBS setup with 2 MeV He+ ions, Ecopia Hall Measurement HMS 3000, and e-beam evaporation system. Materials included ZnO and SnO2 powders (AlfaAesar,

4：9% pure). Experimental Procedures and Operational Workflow:

Powder synthesis by grinding and sintering, substrate cleaning, thin film deposition with e-beam evaporation at

5：75 kV and 20 mA, annealing in air for 6 hours, followed by characterization using XRD, AFM, RBS, UV-Vis, Hall effect, and resistance measurements. Data Analysis Methods:

XRD data analyzed for crystallinity and size using Debye-Scherrer equation, AFM for grain size and roughness, RBS for thickness and composition with SIMNRA software, optical data for band gap via Tauc plot, and electrical data for conductivity and mobility.