研究目的
To review the usage of halide vapor phase epitaxy (HVPE) for the growth and device applications of Ga2O3, focusing on its technological aspects and potential for large-area substrates and high-power devices.
研究成果
HVPE is a promising technique for epitaxy of large-area Ga2O3 substrates and fabrication of high-power β-Ga2O3 devices, such as Schottky barrier diodes with breakdown voltages up to 1.1 kV. It offers fast growth rates and versatility for both substrates and devices, with potential for further development as a universal equipment for GaN and Ga2O3 epitaxy.
研究不足
The as-grown Ga2O3 films suffer from large surface roughness due to high growth rates, requiring additional polishing. Presence of Cl-induced impurities and defects from GaCl source. Challenges in controlling crystal orientation, cutting, and polishing due to easy cleavage of Ga2O3. High growth temperatures and precise condition control are needed.
1：Experimental Design and Method Selection:
The paper reviews HVPE as a non-organic CVD technique for epitaxial growth of Ga2O3, discussing thermodynamic control, chemical reactions (e.g., Ga(s) + HCl(g) → GaCl(g) + H2(g); GaCl(g) + O2(g) → Ga2O3(s) + Cl2(g)), and system configurations (horizontal and vertical HVPE).
2：Sample Selection and Data Sources:
Uses various substrates such as sapphire, MgO, and β-Ga2O3 for heteroepitaxial and homoepitaxial growth, with data from literature and experimental results (e.g., growth on off-angled sapphire to suppress rotational domains).
3：List of Experimental Equipment and Materials:
Includes HVPE systems with reaction chambers at different temperatures, precursors like GaCl and O2, carrier gases (N2, He, Ar), dopant sources (SiCl4, SnCl4, Fe, Mg), and substrates (sapphire, MgO, β-Ga2O3).
4：3).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Describes growth temperatures (e.g., ~1050°C for β-Ga2O3, ≤800°C for α- and ε-Ga2O3), growth rates (up to 250 μm/h), doping methods, and in-situ processes like nitridation for GaN growth.
5：Data Analysis Methods:
Involves characterization techniques such as SEM, AFM for surface roughness (RMS values), HRTEM for structural analysis, and electrical measurements for device performance (e.g., breakdown voltage, ideality factors).
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
