研究目的
To create a completely automatic technique for microwave nonlinear transistor modeling to reduce model building time significantly.
研究成果
The proposed automatic nonlinear modeling technique for GaAs HEMT, combining analytical extraction and multistage optimization, successfully built a model with good agreement to measured linear and nonlinear characteristics in most bias points within 5 hours, demonstrating potential for efficient power amplifier design.
研究不足
The modeling time may vary with PC performance, and different transistor geometries or process features may require algorithm tuning; the technique was tested only on a specific GaAs pHEMT process.
1：Experimental Design and Method Selection:
The technique combines analytical extraction and multistage optimization for automated modeling, using the Angelov model for DC behavior and modified-median method for small-signal parameter determination.
2：Sample Selection and Data Sources:
A
3：15um GaAs pHEMT with 4x75 um gate width was used, with input data from DC and microwave measurements including IV-curve, S-parameters, and power characteristics. List of Experimental Equipment and Materials:
Not specified in the paper.
4：Experimental Procedures and Operational Workflow:
Steps include IV-curve parameter calculation, small-signal modeling with automated extraction, nonlinear capacitance approximation, and multistage optimization, implemented as a plug-in for EDA NI AWR Microwave Office.
5：Data Analysis Methods:
Trust region algorithm for nonlinear least squares problems, modified-median technique for frequency-independent parameter determination, and verification with mean absolute error calculations.
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