研究目的
To research the correlation between bonding structures, contact properties of SnO2 thin films, and transfer characteristics of TFTs, and to demonstrate the relationship between amorphous structure, oxygen vacancy, and high mobility in TFTs with ambipolar characteristics.
研究成果
Amorphous SnO2 structure formed with high oxygen gas flow and annealing shows superior ambipolar transfer characteristics due to increased diffusion current in the depletion layer, despite lower carrier concentrations, enhancing TFT performance compared to crystalline structures.
研究不足
The study is limited to SnO2 thin films and specific annealing conditions; potential optimizations could include varying other deposition parameters or exploring different oxide semiconductors.
1：Experimental Design and Method Selection:
The study used RF sputtering for SnO2 deposition on n-type Si with SiOC as a gate insulator, annealing at 100–150°C to vary bonding structures, and analyzed physical properties via XRD and electrical characteristics via semiconductor parameter analyzer.
2：Sample Selection and Data Sources:
SnO2 thin films were deposited with various oxygen gas flow rates (5, 10, 15 sccm) and Ar=20 sccm, annealed at different temperatures.
3：List of Experimental Equipment and Materials:
RF sputtering system, semiconductor parameter analyzer (Hp4155A), XRD equipment, Al, SnO2, SiOC, Si substrates.
4：Experimental Procedures and Operational Workflow:
Deposit SnO2 with varying O2 flow rates, anneal at 100–150°C, analyze XRD patterns, measure current-voltage and capacitance using Hp4155A with Al/SnO2/SiOC/Si structure.
5：Data Analysis Methods:
Analysis of XRD intensity changes, I-V and capacitance curves, and transfer characteristics to infer conduction mechanisms and mobility.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
