研究目的
To develop a hybrid flip-chip integration interface for efficient coupling of InP-based laser sources to silicon nitride photonic platforms, enabling high optical power output over a wide temperature range with good alignment tolerance and thermal management.
研究成果
The hybrid flip-chip integration interface successfully achieves efficient coupling with up to 40mW optical power at 20°C and 18mW at 85°C, maintaining single-mode operation with SMSR >40dB. The design provides good thermal management and alignment tolerance, making it suitable for integrating various optical sources into SiN and potentially other platforms like SOI or polymer.
研究不足
The integration requires a safety air gap of 6μm to avoid chip damage, contributing to coupling loss. Horizontal misalignment due to thermal expansion during bonding and non-Gaussian beams add to losses. The process may not be fully optimized for mass production, and absolute placement accuracy of the bonding machine limits visual alignment.
1：Experimental Design and Method Selection:
The study involves designing and fabricating InP DFB lasers and SiN TriPleX chips with integrated tapers for mode matching and alignment features. Two alignment methods (active and visual) are explored for horizontal alignment, with vertical alignment achieved via physical stops.
2：Sample Selection and Data Sources:
Samples include processed flip-chip DFB lasers and SiN test chips with multiple recesses and reference waveguides.
3：List of Experimental Equipment and Materials:
Equipment includes a manual die-bonder (FINEPLACER lambda), piezo stage for active alignment, integrating sphere, cleaved fiber for power measurement, and RSoft simulation software. Materials include AuSn solder, Au paste (AuRoFUSE, Tanaka Kikinzoku Kogyo Co., Ltd.), and InGaAsP-based laser structures.
4：Experimental Procedures and Operational Workflow:
Lasers are flip-chip bonded using eutectic bonding or Au paste, with alignment performed actively or visually. Optical power, coupling loss, far field, and spectra are measured at various temperatures and currents.
5：Data Analysis Methods:
Coupling loss is calculated using Gaussian approximation based on far field measurements; power and SMSR are analyzed from experimental data.
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